– The control gate, usually used for Automatic Gain Control (AGC) or local oscillator (LO) injection. Pin 4: Gate 1 (G1) – The primary RF signal input gate. 3. Absolute Maximum Ratings
The electrical characteristics define how the transistor performs under standard operating conditions ( DC Characteristics Gate-Source Cutoff Voltage (
The is a classic, high-performance N-channel dual-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by prominent semiconductor pioneers such as NEC , Hitachi, and Motorola. Primarily packaged in a hermetically sealed metal TO-72 (CAN-4) enclosure , this device is legendary in legacy RF (Radio Frequency) engineering for its high switching speeds, exceptionally low power dissipation, and outstanding noise-performance balance. 3sk41 datasheet
– Connects to the substrate/ground, often tied directly to a ground plane to minimize inductance.
: The dual-gate structure allows one gate to receive the RF signal and the other to receive the Local Oscillator (LO) signal, resulting in efficient mixing. – The control gate, usually used for Automatic
is a specialized N-channel silicon dual-gate MOSFET primarily used for high-frequency applications like VHF/UHF amplifiers and mixers. Often manufactured by companies like
It is highly effective in frequency mixer circuits, where local oscillator and RF signals are applied to separate gates to produce an intermediate frequency (IF). Low Feedback Capacitance: : The dual-gate structure allows one gate to
The dual-gate construction of the 3SK41 provides distinctive performance dynamics, notably high forward transconductance ( gfsg sub f s end-sub ) and extremely low feedback capacitance. Forward Transconductance ( gfsg sub f s end-sub
The 3SK41 is a classic, high-frequency N-channel dual-gate Gallium Arsenide (GaAs) Metal-Semiconductor Field-Effect Transistor (MESFET). Manufactured historically by brands like Toshiba, this component became a staple in radio frequency (RF) engineering. It was widely adopted for its low noise figure and high gain at Ultra High Frequencies (UHF).